GaN Power IC in DFN5x6 Package These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast ...
GaN Power IC in DFN5x6 Package These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology. The gate driver is integrated with the main power transistor resulting in fast ...
